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NBN EN 60749-18 : 2003

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 18: IONIZING RADIATION (TOTAL DOSE)

Published date

12-01-2013

1 Scope
2 Terms and definitions
3 Test apparatus
  3.1 Radiation source
  3.2 Dosimetry system
  3.3 Electrical test instruments
  3.4 Test circuit board(s)
  3.5 Cabling
  3.6 Interconnect or switching system
  3.7 Environmental chamber
4 Procedure
  4.1 Sample selection and handling
  4.2 Burn-in
  4.3 Dosimetry measurements
  4.4 Lead/aluminium (Pb/Al) container
  4.5 Radiation level(s)
  4.6 Radiation dose rate
       4.6.1 Condition A
       4.6.2 Condition B
       4.6.3 Condition C
  4.7 Temperature requirements
  4.8 Electrical performance measurements
  4.9 Test conditions
       4.9.1 In-flux testing
       4.9.2 Remote testing
       4.9.3 Bias and loading conditions
  4.10 Post-irradiation procedure
  4.11 Extended room temperature anneal test
       4.11.1 Need to perform an extended room
              temperature anneal test
       4.11.2 Extended room temperature anneal test
              procedure
  4.12 MOS accelerated annealing test
       4.12.1 Need to perform accelerated annealing
              test
       4.12.2 Accelerated annealing test procedure
  4.13 Test report
5 Summary

Covers a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 ([60]Co) gamma ray source.

DocumentType
Standard
PublisherName
Belgian Standards
Status
Current

Standards Relationship
DIN EN 60749-18:2003-09 Identical
EN 60749-18:2003 Identical
BS EN 60749-18:2003 Identical
I.S. EN 60749-18:2003 Identical
UNE-EN 60749-18:2003 Identical
SN EN 60749-18 : 2003 Identical
NF EN 60749-18 : 2003 Identical

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