PD ISO/TR 22335:2007

Foreword
Introduction
1 Scope
2 Terms and definitions
3 Symbols and abbreviated terms
4 Principle
5 Procedure
   5.1 Generating the replica pattern
   5.2 Measurement of sputtered crater depth using a
        stylus profilometer
   5.3 Estimation of sputtering rate
6 Summary of round-robin results
Annex A (informative) Geometry of specimen surface and
                      ion gun
Annex B (informative) Dependance of replica patterns on
                      mesh-opening size
Bibliography

Explains a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm[2] and 3,0 mm[2].

This Technical Report describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm² and 3,0 mm². This Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time.

This Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm² or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.