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SEMI 3D5 : 2014(R2018)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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GUIDE FOR METROLOGY TECHNIQUES TO BE USED IN MEASUREMENT OF GEOMETRICAL PARAMETERS OF THROUGH-SILICON VIAS (TSVS) IN 3DS-IC STRUCTURES

Superseded date

11-03-2024

Superseded by

SEMI 3D5:2024

Published date

28-07-2013

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Specifies on the geometrical parameters of the openings (i.e., holes) in thin silicon slices, within which the conductive vias will be constructed.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (07/2013)
DocumentType
Revision
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF1530 : 2007(R2018) TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING

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