SEMI M36 : 1999
Current
Current
The latest, up-to-date edition.
TEST METHOD FOR MEASURING ETCH PIT DENSITY (EPD) IN LOW DISLOCATION DENSITY GALLIUM ARSENIDE WAFERS
Published date
12-01-2013
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Describes a method to measure etch pit density (EPD) in low dislocation density GaAs wafers. Also describes a procedure to measure EPD of 50 mm and 76 mm diameter round GaAs wafers with an EPD of less than 5000/cm[2].
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Current
|
| SEMI M54 : 2004(R2011) | GUIDE FOR SEMI-INSULATING (SI) GAAS MATERIAL PARAMETERS |
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