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SEMI M36 : 1999

SEMI M36 : 1999

Current

Current

The latest, up-to-date edition.

TEST METHOD FOR MEASURING ETCH PIT DENSITY (EPD) IN LOW DISLOCATION DENSITY GALLIUM ARSENIDE WAFERS

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Describes a method to measure etch pit density (EPD) in low dislocation density GaAs wafers. Also describes a procedure to measure EPD of 50 mm and 76 mm diameter round GaAs wafers with an EPD of less than 5000/cm[2].

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (05/2001)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

SEMI M54 : 2004(R2011) GUIDE FOR SEMI-INSULATING (SI) GAAS MATERIAL PARAMETERS

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