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SEMI M39 : 1999

SEMI M39 : 1999

Current

Current

The latest, up-to-date edition.

TEST METHOD FOR MEASURING RESISTIVITY AND HALL COEFFICIENT AND DETERMINING HALL MOBILITY ON SEMI-INSULATING GAAS SINGLE CRYSTALS

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Describes a method to measure resistivity and determine Hall mobility of semi-insulating GaAs single crystals by the Van der Pauw method. Especially, this document specifies a simple and practical method for commercial semi-insulating GaAs single crystals.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (05/2001)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

SEMI M23 : 2003(R2018) SPECIFICATION FOR POLISHED MONOCRYSTALLINE INDIUM PHOSPHIDE WAFERS
SEMI M54 : 2004(R2011) GUIDE FOR SEMI-INSULATING (SI) GAAS MATERIAL PARAMETERS
SEMI M64 : 2015 TEST METHOD FOR THE EL2 DEEP DONOR CONCENTRATION IN SEMI-INSULATING (SI) GALLIUM ARSENIDE SINGLE CRYSTALS BY INFRARED ABSORPTION SPECTROSCOPY

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