SEMI M39 : 1999
Current
Current
The latest, up-to-date edition.
TEST METHOD FOR MEASURING RESISTIVITY AND HALL COEFFICIENT AND DETERMINING HALL MOBILITY ON SEMI-INSULATING GAAS SINGLE CRYSTALS
Published date
12-01-2013
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Describes a method to measure resistivity and determine Hall mobility of semi-insulating GaAs single crystals by the Van der Pauw method. Especially, this document specifies a simple and practical method for commercial semi-insulating GaAs single crystals.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
|
| SEMI M23 : 2003(R2018) | SPECIFICATION FOR POLISHED MONOCRYSTALLINE INDIUM PHOSPHIDE WAFERS |
| SEMI M54 : 2004(R2011) | GUIDE FOR SEMI-INSULATING (SI) GAAS MATERIAL PARAMETERS |
| SEMI M64 : 2015 | TEST METHOD FOR THE EL2 DEEP DONOR CONCENTRATION IN SEMI-INSULATING (SI) GALLIUM ARSENIDE SINGLE CRYSTALS BY INFRARED ABSORPTION SPECTROSCOPY |
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