SEMI M51 : 2012
Current
Current
The latest, up-to-date edition.
TEST METHOD FOR CHARACTERIZING SILICON WAFER BY GATE OXIDE INTEGRITY
Published date
12-01-2013
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Specifies procedures for characterizing silicon wafers to determine gate oxide integrity (GOI).
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (06/2002)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
|
| SEMI MF1771 : 2016 | TEST METHOD FOR EVALUATING GATE OXIDE INTEGRITY BY VOLTAGE RAMP TECHNIQUE |
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