SEMI M54 : 2004(R2011)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
GUIDE FOR SEMI-INSULATING (SI) GAAS MATERIAL PARAMETERS
Superseded date
06-04-2019
Superseded by
Published date
12-01-2013
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Gives a basis for specifying the material parameters of SI GaAs to support ordering agreements between suppliers and purchasers.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2003)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M82 : 2013 | TEST METHOD FOR THE CARBON ACCEPTOR CONCENTRATION IN SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTALS BY INFRARED ABSORPTION SPECTROSCOPY |
| SEMI M87 : 2016 | TEST METHOD FOR CONTACTLESS RESISTIVITY MEASUREMENT OF SEMI-INSULATING SEMICONDUCTORS |
| SEMI M36 : 1999 | TEST METHOD FOR MEASURING ETCH PIT DENSITY (EPD) IN LOW DISLOCATION DENSITY GALLIUM ARSENIDE WAFERS |
| SEMI M30 : 1997 | STANDARD TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON CONCENTRATION IN GAAS BY FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY |
| SEMI M15 : 1998 | POLISHED WAFER DEFECT LIMITS TABLE FOR SEMI-INSULATING GALLIUM ARSENIDE WAFERS |
| SEMI M39 : 1999 | TEST METHOD FOR MEASURING RESISTIVITY AND HALL COEFFICIENT AND DETERMINING HALL MOBILITY ON SEMI-INSULATING GAAS SINGLE CRYSTALS |
| SEMI M9 : 2016 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS |
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