SEMI M60 : 2014
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TEST METHOD FOR TIME DEPENDENT DIELECTRIC BREAKDOWN CHARACTERISTICS OF SIO[2] FILMS FOR SI WAFER EVALUATION
Published date
12-01-2013
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Specifies detailed procedures for characterizing silicon wafers GOI using the TDDB method.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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| SEMI M51 : 2012 | TEST METHOD FOR CHARACTERIZING SILICON WAFER BY GATE OXIDE INTEGRITY |
| SEMI MF1771 : 2016 | TEST METHOD FOR EVALUATING GATE OXIDE INTEGRITY BY VOLTAGE RAMP TECHNIQUE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M51 : 2012 | TEST METHOD FOR CHARACTERIZING SILICON WAFER BY GATE OXIDE INTEGRITY |
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