SEMI MF1188:2007(R2023)
Current
The latest, up-to-date edition.
Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline
Hardcopy
English
01-11-2023
Important note : Users cannot be edited or removed once added to your Multi user PDF.This Test Method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared absorption band at room temperature, using a short baseline drawn between 1040 cm1 and 1160 cm1 to reduce the uncertainties due to perturbations in the IR absorption at the end-point regions of longer baselines that arise from effects other than absorption by interstitial oxygen. Use of the short baseline results in improved precision of the method.
| DocumentType |
Test Method
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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| Supersedes |
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