SEMI MF1188:2007(R2023)
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Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline
Hardcopy
English
01-11-2023
This Test Method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared absorption band at room temperature, using a short baseline drawn between 1040 cm1 and 1160 cm1 to reduce the uncertainties due to perturbations in the IR absorption at the end-point regions of longer baselines that arise from effects other than absorption by interstitial oxygen. Use of the short baseline results in improved precision of the method.
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