SEMI MF1389 : 2015
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TEST METHOD FOR PHOTOLUMINESCENCE ANALYSIS OF SINGLE CRYSTAL SILICON FOR 3-5 IMPURITIES
Published date
12-01-2013
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Includes the simultaneous determination of electrically active boron, phosphorus, arsenic, and aluminum content in low-dislocation monocrystalline silicon.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2003)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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