SEMI MF1392:2007(R2023)
Current
The latest, up-to-date edition.
Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
Hardcopy
English
01-10-2023
Important note : Users cannot be edited or removed once added to your Multi user PDF.This Test Method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 × 1013 carriers/cm3 to about 8 × 1016 carriers/cm3 (resistivity range from about 0.1 Ω·cm to about 100 Ω·cm in n-type wafers and from about 0.24 Ω·cm to about 330 Ω·cm in p-type wafers).
| DocumentType |
Test Method
|
| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Current
|
| Supersedes |
| SEMI MF525:2012(R2018) | Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe |
| SEMI MF525:2012(R2023) | Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe |
| SEMI MF1527:2012 | Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI MF672:2012(R2023) | Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe |
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