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SEMI MF1392:2007(R2023)

SEMI MF1392:2007(R2023)

Current

Current

The latest, up-to-date edition.

Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe

Available format(s)

Hardcopy

Language(s)

English

Published date

01-10-2023

Publisher

Semiconductor Equipment & Materials Institute

This Test Method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 × 1013 carriers/cm3 to about 8 × 1016 carriers/cm3 (resistivity range from about 0.1 Ω·cm to about 100 Ω·cm in n-type wafers and from about 0.24 Ω·cm to about 330 Ω·cm in p-type wafers).

DocumentType
Test Method
Pages
0
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current
Supersedes

SEMI MF525:2012(R2018) Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
SEMI MF525:2012(R2023) Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
SEMI MF1527:2012 Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon

SEMI MF84:2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI MF672:2012(R2023) Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe

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Hardcopy - English
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