SEMI MF1619:2007(R2023)
Current
Current
The latest, up-to-date edition.
Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
Available format(s)
Hardcopy
Language(s)
English
Published date
01-10-2023
Important note : Users cannot be edited or removed once added to your Multi user PDF.This Test Method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy.
| DocumentType |
Test Method
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Current
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| Supersedes |
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