SEMI MF1619:2007(R2023)
Current
Current
The latest, up-to-date edition.
Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
Available format(s)
Hardcopy
Language(s)
English
Published date
01-10-2023
€141.67
Excluding VAT
This Test Method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy.
| DocumentType |
Test Method
|
| Pages |
0
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Current
|
| Supersedes |
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