SEMI MF1619:2007(R2023)
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Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
Available format(s)
Hardcopy
Language(s)
English
Published date
01-10-2023
This Test Method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy.
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