SEMI MF2139:2003(R2021)
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Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry
Hardcopy
English
01-11-2021
Secondary ion mass spectrometry (SIMS) can measure in un-annealed, polished Czochralski (CZ) silicon substrates the nitrogen concentration that may be intentionally introduced to: (1) increase the V/G tolerance for grown-in defects free region, where V is the pull rate and G is the crystal temperature gradient at the solid-liquid interface; (2) increase the void-free denuded zone depth and the bulk micro-defect density after annealing in hydrogen or argon; (3) reduce the crystal originated particle (COP) size after annealing; or (4) enhance the precipitation of oxygen in epitaxial substrates under reduced temperature processing.
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