SEMI MF374:2012(R2023)
Current
The latest, up-to-date edition.
Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
Hardcopy
English
01-10-2023
This Test Method covers the direct measurement of the average sheet resistance of thin layers of silicon formed by epitaxy, diffusion, or implantation onto or below the surface of a circular silicon wafer having the opposite conductivity type from the thin layer to be measured or by the deposition of polysilicon over an insulating layer.
DocumentType |
Test Method
|
Pages |
0
|
PublisherName |
Semiconductor Equipment & Materials Institute
|
Status |
Current
|
Supersedes |
SEMI MF525:2012(R2023) | Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe |
SEMI MF525:2012(R2018) | Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe |
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