SEMI MF95:2007(R2023)
Current
Current
The latest, up-to-date edition.
Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer
Available format(s)
Hardcopy
Language(s)
English
Published date
01-10-2023
This Test Method is a manual technique that requires the use of a dispersive infrared spectrophotometer.
DocumentType |
Test Method
|
Pages |
0
|
PublisherName |
Semiconductor Equipment & Materials Institute
|
Status |
Current
|
Supersedes |
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