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SEMI MF950 : 2007(R2018)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by

TEST METHOD FOR MEASURING THE DEPTH OF CRYSTAL DAMAGE OF A MECHANICALLY WORKED SILICON WAFER SURFACE BY ANGLE POLISHED AND DEFECT ETCHING

Superseded date

04-11-2023

Superseded by

SEMI MF950:2007(R2023)

Published date

04-08-2018

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Proposed for use in process control where each individual location is responsible to determine the internal repeatability to its satisfaction.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005) Also available in CD-ROM. (11/2006)
DocumentType
Revision
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI C28 : 2011 SPECIFICATIONS FOR HYDROFLUORIC ACID
SEMI MF672 : 2007 TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE
SEMI MF1809 : 2010(R2015) GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON

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