SEMI MF950:2007(R2023)
Current
Current
The latest, up-to-date edition.
Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching
Available format(s)
Hardcopy
Language(s)
English
Published date
01-10-2023
This Test Method covers a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer.
DocumentType |
Test Method
|
Pages |
0
|
PublisherName |
Semiconductor Equipment & Materials Institute
|
Status |
Current
|
Supersedes |
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