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SEMI MF950:2007(R2023)

Current

Current

The latest, up-to-date edition.

Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching

Available format(s)

Hardcopy

Language(s)

English

Published date

01-10-2023

€152.54
Excluding VAT

This Test Method covers a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer.

DocumentType
Test Method
Pages
0
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current
Supersedes

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