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SEMI PV41 : 2012

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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TEST METHOD FOR IN-LINE, NONCONTACT MEASUREMENT OF THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS FOR PV APPLICATIONS USING CAPACITIVE PROBES

Superseded date

04-05-2019

Superseded by

SEMI PV41 : 2012(R2019)

Published date

12-01-2013

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Specifies a noncontact, high throughput in-line method for measuring wafer thickness and its total variation using capacitive probes.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (10/2012)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI PV70 : 2016 TEST METHOD FOR IN-LINE MEASUREMENT OF SAW MARKS ON PHOTOVOLTAIC (PV) SILICON WAFERS BY LASER TRIANGULATION SENSORS
SEMI PV46 : 2013 TEST METHOD FOR IN-LINE MEASUREMENT OF LATERAL DIMENSIONAL CHARACTERISTICS OF SQUARE AND PSEUDO-SQUARE PV SILICON WAFERS
SEMI PV71 : 2016 TEST METHOD FOR IN-LINE, NONCONTACT MEASUREMENT OF THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS FOR PHOTOVOLTAIC (PV) APPLICATIONS USING LASER TRIANGULATION SENSORS
SEMI PV22 : 2017 SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI E89 : 2007(R2013) GUIDE FOR MEASUREMENT SYSTEM ANALYSIS (MSA)
SEMI PV22 : 2017 SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS
SEMI MF1569 : 2007 GUIDE FOR GENERATION OF CONSENSUS REFERENCE MATERIALS FOR SEMICONDUCTOR TECHNOLOGY

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