UNE-EN 60749-6:2017
Current
The latest, up-to-date edition.
Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature (Endorsed by Asociación Española de Normalización in July of 2017.)
Hardcopy , PDF
English
01-07-2017
The purpose of this part of IEC 60749 is to test and determine the effect on all solid stateelectronic devices of storage at elevated temperature without electrical stress applied. Thistest is typically used to determine the effects of time and temperature, under storageconditions, for thermally activated failure methods and time-to-failure of solid state electronicdevices, including non-volatile memory devices (data-retention failure mechanisms). Thistest is considered non-destructive but should preferably be used for device qualification. Ifsuch devices are used for delivery, the effects of this highly accelerated stress test will needto be evaluated.Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration,and guidance on the selection of test temperatures and durations can be found in IEC 60749-43
| Committee |
CTN 209/SC 47
|
| DocumentType |
Standard
|
| Pages |
16
|
| PublisherName |
Asociación Española de Normalización
|
| Status |
Current
|
| Standards | Relationship |
| IEC 60749-6:2017 | Identical |
| EN 60749-6:2017 | Identical |
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