UNE-EN 62979:2017
Current
The latest, up-to-date edition.
Photovoltaic module - Bypass diode - Thermal runaway test (Endorsed by Asociación Española de Normalización in October of 2018.)
Hardcopy , PDF
English
01-10-2018
This international standard provides a method for evaluating whether a bypass diode (BD) asmounted in the module is susceptible to thermal runaway or if there is sufficient cooling for itto survive the transition from forward bias operation to reverse bias operation withoutoverheating.This test methodology is particularly suited for testing of Schottky Barrier Diodes (SBD),which have the characteristic of increasing leakage current as a function of reverse biasvoltage at high temperature, making them more susceptible to thermal runaway.
| Committee |
CTN 220
|
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
Asociación Española de Normalización
|
| Status |
Current
|
| Standards | Relationship |
| IEC 62979:2017 | Identical |
| EN 62979:2017 | Identical |
| BS 2011-2.2Kd:1984 | Identical |
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