UNE-EN IEC 60749-18:2019
Current
The latest, up-to-date edition.
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose) (Endorsed by Asociación Española de Normalización in July of 2019.)
Hardcopy , PDF
English
01-07-2019
This part of IEC 60749 provides a test procedure for defining requirements for testingpackaged semiconductor integrated circuits and discrete semiconductor devices for ionizingradiation (total dose) effects from a cobalt-60 (60Co) gamma ray source.There are four tests presented in this procedure:a) a standard room temperature irradiation testb) an irradiation at elevated temperature/cryogenic temperature testc) an accelerated annealing testd) an Enhanced Low Dose Rate Sensitivity (ELDRS) test.The accelerated annealing test estimates how dose rate ionizing radiation effects on devicesis important for low dose-rate or certain other applications in which devices may exhibitsignificant time-dependent effects. The ELDRS test determines if devices with bipolar linearcomponents exhibit sensitivity to enhanced radiation induced damage at low dose ratesThis standard provides an accelerated annealing test for estimating low dose rate ionizingradiation effects on devices. This annealing test is important for low dose rate or certain otherapplications in which devices may exhibit significant time-dependent effects.This standard addresses only steady-state irradiations, and is not applicable to pulse typeirradiations.It is intended for military- and space-related applications.This standard may produce severe degradation of the electrical properties of irradiateddevices and thus should be considered a destructive test.
| Committee |
CTN 209/SC 47
|
| DocumentType |
Standard
|
| ISBN |
978-2-8322-6755-4
|
| Pages |
29
|
| PublisherName |
Asociación Española de Normalización
|
| Status |
Current
|
| Standards | Relationship |
| EN IEC 60749-18:2019 | Identical |
| IEC 60749-18:2019 | Identical |
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