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Test Method for Stacking Fault Density of Epitaxial Layers of Silicon by Interference-Contrast Microscopy (Withdrawn 1998)
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Superseded date: 31-12-1998
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Published date: 31-12-2010
Publisher: American Society for Testing and Materials
CONTAINED IN VOL 10.05 1997 Describes non-destructive determination of stacking fault density in epitaxial layers of silicon. Precision at densities in excess of 15 000 cm to the minus 2 is less than that at lower densities.
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