ASTM F 617 : 2000
Withdrawn
A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.
Standard Test Method for Measuring MOSFET Linear Threshold Voltage (Withdrawn 2006)
Hardcopy , PDF
13-07-2006
English
10-06-2000
Important note : Users cannot be edited or removed once added to your Multi user PDF.CONTAINED IN VOL. 10.04, 2006 Defines test requirements for the measurement of MOSFET linear threshold voltage under very low sweep rate or d-c conditions.
| Committee |
F 01
|
| DevelopmentNote |
Supersedes ASTM F 617M (07/2004)
|
| DocumentType |
Test Method
|
| Pages |
6
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Withdrawn
|
1.1 This test method covers the measurement of MOSFET (see Note 1) linear threshold voltage under very low sweep rate or d-c conditions. It is a d-c conductance method applicable in the linear region of MOSFET operation where a drain voltage V D of approximately 0.1 V is typical.
Note 1--MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.
1.2 This test method is applicable to both enhancement-mode and depletion-mode MOSFETs, and for both silicon-on-insulator (SOI) and bulk-silicon MOSFETs. The test method specifies positive voltage and current conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current make the test method directly applicable to p-channel MOSFETs.
1.3 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this test method.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
| SAE J1879_201402 | Handbook for Robustness Validation of Semiconductor Devices in Automotive Applications |
| ASTM F 1096 : 1987 | Method for Measuring Mosfet Saturated Threshold Voltage (Withdrawn 1992) |
| MIL-HDBK-817 Base Document:1994 | SYSTEM DEVELOPMENT RADIATION HARDNESS ASSURANCE |
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