BS EN 60749-18:2003

1 Scope
2 Terms and definitions
3 Test apparatus
  3.1 Radiation source
  3.2 Dosimetry system
  3.3 Electrical test instruments
  3.4 Test circuit board(s)
  3.5 Cabling
  3.6 Interconnect or switching system
  3.7 Environmental chamber
4 Procedure
  4.1 Sample selection and handling
  4.2 Burn-in
  4.3 Dosimetry measurements
  4.4 Lead/aluminium (Pb/Al) container
  4.5 Radiation level(s)
  4.6 Radiation dose rate
       4.6.1 Condition A
       4.6.2 Condition B
       4.6.3 Condition C
  4.7 Temperature requirements
  4.8 Electrical performance measurements
  4.9 Test conditions
       4.9.1 In-flux testing
       4.9.2 Remote testing
       4.9.3 Bias and loading conditions
  4.10 Post-irradiation procedure
  4.11 Extended room temperature anneal test
       4.11.1 Need to perform an extended room
              temperature anneal test
       4.11.2 Extended room temperature anneal test
              procedure
  4.12 MOS accelerated annealing test
       4.12.1 Need to perform accelerated annealing
              test
       4.12.2 Accelerated annealing test procedure
  4.13 Test report
5 Summary

Covers a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 ([60]Co) gamma ray source.

Provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source. Proposes an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. It is intended for military- and space-related applications.