BS EN 62416:2010
Current
The latest, up-to-date edition.
Semiconductor devices. Hot carrier test on MOS transistors
Hardcopy , PDF
English
31-07-2010
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1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography
Specifies the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 07/30163748 DC & 08/30177349 DC. (07/2010)
|
| DocumentType |
Standard
|
| Pages |
14
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This standard describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.
| Standards | Relationship |
| IEC 62416:2010 | Identical |
| EN 62416 : 2010 | Identical |
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