BS EN 62418:2010
Current
The latest, up-to-date edition.
Semiconductor devices. Metallization stress void test
Hardcopy , PDF
English
31-08-2010
Important note : Users cannot be edited or removed once added to your Multi user PDF.
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation
(resistance change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration mechanism
Annex B (informative) - Technology-dependent factors
for aluminium
Annex C (informative) - Technology-dependent factors
for copper
Annex D (informative) - Precautions
Bibliography
Specifies a method of metallization stress void test and associated criteria.
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 08/30180164 DC. (08/2010)
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.
| Standards | Relationship |
| IEC 62418:2010 | Identical |
| EN 62418 : 2010 | Identical |
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