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I.S. EN 62418:2010

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - METALLIZATION STRESS VOID TEST

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2010

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.


Dates of withdrawal of national standards are available from NSAI.

FOREWORD
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation
  (resistance change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration mechanism
Annex B (informative) - Technology-dependent factors
                        for aluminium
Annex C (informative) - Technology-dependent factors
                        for copper
Annex D (informative) - Precautions
Bibliography

Specifies a method of metallization stress void test and associated criteria.

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
20
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
EN 62418 : 2010 Identical
IEC 62418:2010 Identical

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