BS EN 62418:2010
Current
The latest, up-to-date edition.
Semiconductor devices. Metallization stress void test
Hardcopy , PDF
English
31-08-2010
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation
(resistance change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration mechanism
Annex B (informative) - Technology-dependent factors
for aluminium
Annex C (informative) - Technology-dependent factors
for copper
Annex D (informative) - Precautions
Bibliography
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