BS ISO 14706:2014

Foreword
Introduction
1 Scope
2 Normative reference
3 Terms and definitions
4 Abbreviated terms
5 Principle
6 Apparatus
7 Environment for specimen preparation and measurement
8 Calibration reference materials
9 Safety
10 Measurement procedure
11 Expression of results
12 Precision
13 Test report
Annex A (informative) - Reference materials
Annex B (informative) - Relative sensitivity factor
Annex C (informative) - Preparation of reference materials
Annex D (informative) - VPD-TXRF method
Annex E (informative) - Glancing-angle settings
Annex F (informative) - International inter-laboratory test
        results
Bibliography

Defines a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.

This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.

The method is applicable to the following:

• elements of atomic number from 16 (S) to 92 (U);

• contamination elements with atomic surface densities from 1×10¹⁰ atoms/cm² to 1×10¹⁴ atoms/cm²;

• contamination elements with atomic surface densities from 5×10⁸ atoms/cm² to 5×10¹²atoms/cm² using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).