CEI EN 62047-16 : 2016
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS
Hardcopy , PDF
English
01-01-2016
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FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography
Annex ZA (normative) - Normative references to international
publications with their corresponding European
publications
Defines the test methods to measure the residual stresses of films with thickness in the range of 0,01 [mu]m to 10 [mu]m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
| Committee |
CT 309
|
| DevelopmentNote |
Classificazione CEI 47-126. (08/2017)
|
| DocumentType |
Standard
|
| Pages |
18
|
| PublisherName |
Comitato Elettrotecnico Italiano
|
| Status |
Current
|
| Standards | Relationship |
| IEC 62047-16:2015 | Identical |
| EN 62047-16:2015 | Identical |
| EN 62047-21:2014 | Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials |
| IEC 62047-21:2014 | Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials |
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