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CENELEC
EN 62047-16:2015

EN 62047-16:2015

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

Published date

10-07-2015

Publisher

European Committee for Standards - Electrical

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Committee
CLC/SR 47F
DocumentType
Standard
PublisherName
European Committee for Standards - Electrical
Status
Current

EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials

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