CEI EN 62374-1 : 2012
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS
Hardcopy , PDF
English
01-01-2012
FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation
for lifetime estimation
Bibliography
Defines a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
Committee |
CT 309
|
DevelopmentNote |
Classificazione CEI 47-90. (06/2012)
|
DocumentType |
Standard
|
Pages |
24
|
PublisherName |
Comitato Elettrotecnico Italiano
|
Status |
Current
|
Standards | Relationship |
EN 62374-1:2010/AC:2011 | Identical |
IEC 62374-1:2010 | Identical |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.