• CEI EN 62374-1 : 2012

    Current The latest, up-to-date edition.

    SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS

    Available format(s):  Hardcopy, PDF

    Language(s):  English

    Published date:  01-01-2012

    Publisher:  Comitato Elettrotecnico Italiano

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Terms and definitions
    3 Test equipment
    4 Test samples
    5 Procedures
    6 Lifetime estimation
    7 Lifetime dependence on inter-metal layer area
    8 Summary
    Annex A (informative) - Engineering supplementation
            for lifetime estimation
    Bibliography

    Abstract - (Show below) - (Hide below)

    Defines a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

    General Product Information - (Show below) - (Hide below)

    Committee CT 309
    Development Note Classificazione CEI 47-90. (06/2012)
    Document Type Standard
    Publisher Comitato Elettrotecnico Italiano
    Status Current
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