CEI EN 62374 : 2009
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR GATE DIELECTRIC FILMS
Hardcopy , PDF
English
01-01-2009
Important note : Users cannot be edited or removed once added to your Multi user PDF.
FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) - Supplementary determining test
condition and data analysis
Bibliography
Gives a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.
| Committee |
CT 309
|
| DevelopmentNote |
Classificazione CEI 47-1034. (09/2015)
|
| DocumentType |
Standard
|
| Pages |
28
|
| PublisherName |
Comitato Elettrotecnico Italiano
|
| Status |
Current
|
| Standards | Relationship |
| EN 62374:2007 | Identical |
| IEC 62374:2007 | Identical |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.