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CEI EN 62374 : 2009

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR GATE DIELECTRIC FILMS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2009

FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) - Supplementary determining test
        condition and data analysis
Bibliography

Gives a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.

Committee
CT 309
DevelopmentNote
Classificazione CEI 47-1034. (09/2015)
DocumentType
Standard
Pages
28
PublisherName
Comitato Elettrotecnico Italiano
Status
Current

Standards Relationship
EN 62374:2007 Identical
IEC 62374:2007 Identical

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€80.70
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