EN 62416 : 2010
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - HOT CARRIER TEST ON MOS TRANSISTORS
04-06-2010
FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography
IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors.
| Committee |
SR 47
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| BS EN 62416:2010 | Identical |
| NF EN 62416 : 2010 | Identical |
| NEN EN IEC 62416 : 2010 | Identical |
| I.S. EN 62416:2010 | Identical |
| UNE-EN 62416:2010 | Identical |
| DIN EN 62416:2010-12 | Identical |
| PN EN 62416 : 2010 | Identical |
| NBN EN 62416 : 2010 | Identical |
| CEI EN 62416 : 2011 | Identical |
| IEC 62416:2010 | Identical |
| PNE-FprEN 62416 | Identical |
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