I.S. EN 50513:2009
Current
The latest, up-to-date edition.
SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING
Hardcopy , PDF
English
01-01-2009
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
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1 Scope
2 Normative references
3 Terms, definitions and acronyms
4 Crystallisation process
5 Product characteristics
6 Packaging, marking and storage
7 Major changes of product and processes
8 Wafer thickness
9 Variations in thickness
10 Waviness and warping
11 Grooves and step type saw mark
12 Corrosion rate
13 Determining carrier lifetime measured on as cut wafer
14 Determining minority carrier bulk lifetime measured
on passivated wafers (laboratory measurement)
15 Electrical resistivity of multi and mono crystalline
semiconductor wafers
16 Method for the measurement of substitutional atomic
carbon and interstitial oxygen content in silicon
used as solar material
Annex A (informative) - Geometric dimensions, surfaces and
edge characteristics
Annex B (informative) - Optional requirements
Bibliography
Explains data sheet and product information for crystalline silicon (Si) - solar wafers and measurement methods for wafer properties.
| DocumentType |
Standard
|
| Pages |
36
|
| PublisherName |
National Standards Authority of Ireland
|
| Status |
Current
|
| Standards | Relationship |
| EN 50513:2009 | Identical |
| ISO/IEC 17025:2005 | General requirements for the competence of testing and calibration laboratories |
| DIN 50441-5:2001-04 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 5: TERMS OF SHAPE AND FLATNESS DEVIATION |
| DIN 50434:1986-02 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETECTION OF CRYSTAL DEFECTS IN MONOCRYSTALLINE SILICON USING ETCHING TECHNIQUES ON (111) AND (100) SURFACES |
| DIN 50432:1980-09 | TESTING OF SEMI-CONDUCTING INORGANIC MATERIALS; DETERMINATION OF THE CONDUCTIVITY TYPE OF SILICON OR GERMANIUM BY MEANS OF RECTIFICATION TEST OR HOT-PROBE |
| DIN 50438-2:1982-08 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETERMINATION OF IMPURITY CONTENT IN SILICON BY INFRARED ABSORPTION; CARBON |
| SEMI MF1725 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON INGOTS |
| SEMI MF1810 : 2010(R2015) | TEST METHOD FOR COUNTING PREFERENTIALLY ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS |
| ASTM F 43 : 1999 | Standard Test Methods for Resistivity of Semiconductor Materials (Withdrawn 2003) |
| DIN 50431:1988-05 | TESTING OF SEMICONDUCTOR MATERIALS; MEASUREMENT OF THE RESISTIVITY OF SILICON OR GERMANIUM SINGLE CRYSTALS BY MEANS OF THE FOUR PROBE DIRECT CURRENT METHOD WITH CO-LINEAR ARRAY |
| EN 50461:2006 | Solar cells - Datasheet information and product data for crystalline silicon solar cells |
| ASTM F 1391 : 1993 : R2000 | Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 2003) |
| SEMI MF1809 : 2010(R2015) | GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON |
| DIN 50441-1:1996-07 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 1: THICKNESS AND THICKNESS VARIATION |
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