• ASTM F 43 : 1999

    Withdrawn A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.

    Standard Test Methods for Resistivity of Semiconductor Materials (Withdrawn 2003)

    Available format(s):  Hardcopy, PDF

    Withdrawn date:  10-05-2003

    Language(s):  English

    Published date:  10-12-1999

    Publisher:  American Society for Testing and Materials

    Add To Cart

    Abstract - (Show below) - (Hide below)

    CONTAINED IN VOL. 10.05, 2001 Defines two methods widely used for routine measuring. These apply directly to germanium and silicon. Application of these methods to other semiconductor materials can require use of different probe material and attachment.

    Scope - (Show below) - (Hide below)

    This standard was transferred to SEMI (www.semi.org) May 2003

    1.1 The resistivity of a semiconductor material is an important materials acceptance requirement. Resistivity determinations made during device fabrication are also widely used for quality control purposes.

    1.2 These test methods cover two procedures which are widely used for making routine measurements. These procedures apply directly to both silicon and germanium. Application of these procedures to other semiconductor materials may require the use of different probe material and probe attachment.

    1.2.1 Method A, Two-Probe -This test method requires a bar specimen of measurable cross section and with cross-sectional dimensions small in comparison with the length of the bar. For materials for which no specific ASTM referee method has been developed, this test method is recommended for materials acceptance purposes.

    1.2.2 Method B, Four-Probe -This test method is rapid and does not require a specimen of regular cross section. This test method may be used on irregularly shaped specimens, provided a flat region is available for the contacting probes. As described in this standard, this test method is applicable only to specimens such that the thickness of the specimen and the distance from any probe point to the nearest edge are both at least four times the probe spacing (Note 1). For the special case of specimens of circular cross section with thickness more than one, but less than four, times the probe spacing, measurements by this test method are possible; the required application of approximate geometric corrections will result in improved accuracy (see 9.1.3).

    1.2.3 In general, resistivity measurements are most reliable when made on single crystals, since with such material local variations in impurity which affect the resistivity are less severe. Localized impurity segregation at grain boundaries in polycrystalline material may result in large resistivity variations. Such effects are common to either of the measurement test methods but are more severe with the four-probe test method, and its use, therefore, is not recommended for polycrystalline material.

    1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

    1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

    General Product Information - (Show below) - (Hide below)

    Committee F 01
    Document Type Test Method
    Publisher American Society for Testing and Materials
    Status Withdrawn

    Standards Referenced By This Book - (Show below) - (Hide below)

    MIL-STD-989 Base Document:1991 CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES
    I.S. EN 50513:2009 SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING
    ASTM F 76 : 2008 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
    EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
    ASTM F 76 : 2008 : R2016 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
    ASTM F 76 : 2008 : R2016 : EDT 1 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors (Withdrawn 2023)
    UNE-EN 50513:2011 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
    BS EN 50513:2009 Solar wafers. Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
    ASTM F 40 : 1983 Method for Preparing Monocrystalline Test Ingots of Silicon by the Vertical-Pulling (Czochralski) Technique (Withdrawn 1988)
    08/30176109 DC : DRAFT JAN 2008 BS EN 50513 - SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING

    Standards Referencing This Book - (Show below) - (Hide below)

    ASTM F 613 : 1993 Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)
    ANSI B74.10 : 2015 GRADING OF ABRASIVE MICROGRITS
    • Access your standards online with a subscription

      Features

      • Simple online access to standards, technical information and regulations
      • Critical updates of standards and customisable alerts and notifications
      • Multi - user online standards collection: secure, flexibile and cost effective