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NSAI
I.S. EN 50513:2009

I.S. EN 50513:2009

Current

Current

The latest, up-to-date edition.

SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2009

Publisher

National Standards Authority of Ireland

Preview

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.


Dates of withdrawal of national standards are available from NSAI.

1 Scope
2 Normative references
3 Terms, definitions and acronyms
4 Crystallisation process
5 Product characteristics
6 Packaging, marking and storage
7 Major changes of product and processes
8 Wafer thickness
9 Variations in thickness
10 Waviness and warping
11 Grooves and step type saw mark
12 Corrosion rate
13 Determining carrier lifetime measured on as cut wafer
14 Determining minority carrier bulk lifetime measured
    on passivated wafers (laboratory measurement)
15 Electrical resistivity of multi and mono crystalline
    semiconductor wafers
16 Method for the measurement of substitutional atomic
    carbon and interstitial oxygen content in silicon
    used as solar material
Annex A (informative) - Geometric dimensions, surfaces and
        edge characteristics
Annex B (informative) - Optional requirements
Bibliography

Explains data sheet and product information for crystalline silicon (Si) - solar wafers and measurement methods for wafer properties.

DocumentType
Standard
Pages
36
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
EN 50513:2009 Identical

ISO/IEC 17025:2005 General requirements for the competence of testing and calibration laboratories
DIN 50441-5:2001-04 TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 5: TERMS OF SHAPE AND FLATNESS DEVIATION
DIN 50434:1986-02 TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETECTION OF CRYSTAL DEFECTS IN MONOCRYSTALLINE SILICON USING ETCHING TECHNIQUES ON (111) AND (100) SURFACES
DIN 50432:1980-09 TESTING OF SEMI-CONDUCTING INORGANIC MATERIALS; DETERMINATION OF THE CONDUCTIVITY TYPE OF SILICON OR GERMANIUM BY MEANS OF RECTIFICATION TEST OR HOT-PROBE
DIN 50438-2:1982-08 TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETERMINATION OF IMPURITY CONTENT IN SILICON BY INFRARED ABSORPTION; CARBON
SEMI MF1725 : 2010(R2015) PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON INGOTS
SEMI MF1810 : 2010(R2015) TEST METHOD FOR COUNTING PREFERENTIALLY ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS
ASTM F 43 : 1999 Standard Test Methods for Resistivity of Semiconductor Materials (Withdrawn 2003)
DIN 50431:1988-05 TESTING OF SEMICONDUCTOR MATERIALS; MEASUREMENT OF THE RESISTIVITY OF SILICON OR GERMANIUM SINGLE CRYSTALS BY MEANS OF THE FOUR PROBE DIRECT CURRENT METHOD WITH CO-LINEAR ARRAY
EN 50461:2006 Solar cells - Datasheet information and product data for crystalline silicon solar cells
ASTM F 1391 : 1993 : R2000 Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 2003)
SEMI MF1809 : 2010(R2015) GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON
DIN 50441-1:1996-07 TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 1: THICKNESS AND THICKNESS VARIATION

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