I.S. EN 62418:2010
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - METALLIZATION STRESS VOID TEST
Hardcopy , PDF
English
01-01-2010
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
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FOREWORD
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation
(resistance change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration mechanism
Annex B (informative) - Technology-dependent factors
for aluminium
Annex C (informative) - Technology-dependent factors
for copper
Annex D (informative) - Precautions
Bibliography
Specifies a method of metallization stress void test and associated criteria.
| DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
National Standards Authority of Ireland
|
| Status |
Current
|
| Standards | Relationship |
| EN 62418 : 2010 | Identical |
| IEC 62418:2010 | Identical |
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