• IEC 60747-7:2010

    Superseded A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

    Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

    Available format(s):  Hardcopy, PDF, PDF 3 Users, PDF 5 Users, PDF 9 Users

    Superseded date:  25-09-2019

    Language(s):  English - French

    Published date:  16-12-2010

    Publisher:  International Electrotechnical Committee

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Normative references
    3 Terms and definitions
    4 Letter symbols
    5 Essential ratings and characteristics
    6 Measuring methods
    7 Acceptance and reliability
    Annex A (informative) - Determination of the SOA

    Abstract - (Show below) - (Hide below)

    IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors.
    - Small signal transistors (excluding switching and microwave applications);
    - Linear power transistors (excluding switching, high-frequency, and microwave applications);
    - High-frequency power transistors for amplifier and oscillator applications;
    - Switching transistors for high speed switching and power switching applications;
    - Resistor biased transistors. The main changes with respect to previous edition are listed below.
    a) Clause 1 was amended by adding an item that should be included.
    b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included.
    c) The text of the second edition was combined with that of IEC 60747-7-5.

    This publication is to be read in conjunction with IEC 60747-1:2006.

    General Product Information - (Show below) - (Hide below)

    Committee TC 47/SC 47E
    Development Note To be read in conjunction with IEC 60747-1. Supersedes IEC 60747-7-5. (12/2010) Stability Date: 2018. (09/2017) NEW CHILD AMD 1 2019 IS NOW ADDED
    Document Type Standard
    Product Note NEW CHILD AMD 1 2019 IS NOW ADDED
    Publisher International Electrotechnical Committee
    Status Superseded
    Superseded By
    Supersedes

    Standards Referenced By This Book - (Show below) - (Hide below)

    07/30161967 DC : 0 BS EN 60747-8 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8: FIELD-EFFECT TRANSISTORS
    14/30311054 DC : 0 BS EN 60747-4: AMD 1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS
    CEI EN 60747-15 : 2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
    EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
    I.S. EN 60747-15:2012 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV))
    BS IEC 60747-9:2007 Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs)
    BS EN 60747-16-1 : 2002 SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS
    IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
    IEC 60747-7-5:2005 Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications
    07/30162213 DC : 0 BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
    BS IEC 60747-4 : 2007 SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS
    BS EN 60747-15:2012 Semiconductor devices. Discrete devices Isolated power semiconductor devices
    17/30343732 DC : 0 BS EN 60747-9 - SEMICONDUCTOR DEVICES - PART 9: DISCRETE DEVICES - INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)
    IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
    IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    BS 6493-2.3:1987 Semiconductor devices. Integrated circuits Recommendations for analogue integrated circuits
    BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
    CEI EN 60747-16-1 : 2009 SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS
    BS IEC 60747-7-5:2005 Semiconductor devices. Discrete devices Bipolar transistors for power switching applications
    14/30311058 DC : 0 BS EN 60747-16-1:AMD 2 - SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS
    04/30114936 DC : DRAFT JUN 2004 EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES
    IEC 60747-4:2007+AMD1:2017 CSV Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    IEC 61747-1:1998+AMD1:2003 CSV Liquid crystal and solid-state display devices - Part 1: Generic specification
    EN 60747-16-1:2002/A2:2017 SEMICONDUCTOR DEVICES - PART 16-1: MICROWAVE INTEGRATED CIRCUITS - AMPLIFIERS (IEC 60747-16-1:2001/A2:2017)
    IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 60747-4:2007+AMD1:2017 CSV Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
    IEC 60050-521:2002 International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits
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