BS 6493-1.7:1989

National foreword
Committees responsible
Chapter I: General
1. Introductory note
2. Purpose
3. Letter symbols
Chapter II: Terminology and letter symbols
1. Types of transistors
2. General terms
3. Circuit configurations
4. Terms related to ratings and characteristics
5. s-parameters
6. Letter symbols
6.1 Letter symbols for currents, voltages and powers
6.2 Letter symbols for electrical parameters
6.3 Letter symbols for other quantities
6.4 List of letter symbols
Chapter III: Essential ratings and characteristics
Section One - Low-power signal transistors (excluding
              switching applications)
1. General
2. Ratings (limiting values)
3. Characteristics
4. Application data (under consideration)
Section Two - Power transistors (excluding switching
              and high frequency applications)
1. General
2. Ratings (limiting values)
3. Characteristics
4. Application data (under consideration)
Section Three - High-frequency power transistors for
                amplifier and oscillator applications
1. Type
2. Semiconductor material
3. Polarity
4. Outline
5. Limiting values (absolute maximum system), over the
     operating temperature range unless otherwise stated
6. Characteristics
7. Supplementary information
8. Environmental and/or endurance test information
     (under consideration)
Section four - Switching transistors
1. General
2. Ratings (limiting values)
3. Characteristics
4. Application data (under consideration)
Chapter IV: General and reference measuring methods
Section One - General measuring methods
1. General
2. Collector-base (ICBO) and emitter-base (IEBO)
     cut-off currents (d.c. method)
3. Collector-emitter cut-off currents (d.c. method)
     (ICEO, ICER, ICEX, ICES)
4. Collector-emitter saturation voltage (VCEsat)
5. Base-emitter saturation voltage (VBEsat)
6. Base-emitter voltage (d.c. method) (VBE)
7. Collector-emitter sustaining voltage (VCEO(sus),
     VCER(sus))
8. Capacitances
8.1 Common-base output capacitance (C22b or Cob)
8.2 Collector-base capacitance (Ccb)
9. Hybrid parameters (small-signal and large-signal)
10. Voltage ratings and measurable characteristics
     limiting the working voltages (V(BR)CBO, V(BR)EBO,
     IS/B)
11. Thermal resistance (Rth)
12. Switching times (td, tr, ton, ts, tf, toff)
13. High-frequency parameters (fT, C22b, Re(h1le),
     y..e, s..)
14. Noise (F)
15. Measuring methods for matched-pair bipolar
     transistors
Section Two - Reference Measuring methods
1. General
2. Collector-base cut-off current (reverse current)
     (ICBO)
3. Emitter-base cut-off current (reverse current)
     (IEBO)
4. Collector-emitter saturation voltage (VCEsat)
5. Base-emitter saturation voltage (VBEsat)
6. Base-emitter forward voltage (VBE)
7. Static value of common-emitter forward current
     transfer ratio (h21E)
8. Small-signal common-emitter forward current
     transfer ratio at low frequencies (h21E)
9. Switching parameters (under consideration)
Chapter V: Acceptance and reliability
Section One - Electrical endurance tests
1. General requirements
2. Specific requirements
2.1 List of endurance tests
2.2 Conditions for endurance tests
2.3 Failure-defining characteristics and failure
     criteria for acceptance tests (under consideration)
2.4 Failure-defining characteristics and failure
     criteria for reliability tests
2.5 Procedure in case of a testing error
Table I - Failure-defining characteristics for
            acceptance after endurance tests
Table II - Conditions for the endurance tests