IEC 60747-8:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Hardcopy , PDF
English, English - French
15-12-2010
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings and characteristics
6 Measuring methods
7 Acceptance and reliability
Bibliography
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
| Committee |
TC 47/SC 47E
|
| DevelopmentNote |
To be read in conjunction with IEC 60747-1. (12/2010) Supersedes IEC 60747-8-2, IEC 60747-8-3 & IEC 60747-8-4. (01/2014) Stability Date: 2018. (09/2017)
|
| DocumentType |
Standard
|
| Pages |
170
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| BS IEC 60747-8:2000 | Identical |
| NEN IEC 60747-8 : 2011 | Identical |
| IS 14901 : Part 8 : 2020 | Identical |
| NEN 10747-8 : 1985 | Identical |
| DIN IEC 60747-8:1989-08 | Identical |
| BS IEC 60747-8:2010 | Identical |
| BS 6493-1.8:1985 | Identical |
| NFC 96 008 : 1985 | Identical |