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IEC 60747-8:2010

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Available format(s)

Hardcopy , PDF

Language(s)

English, English - French

Published date

15-12-2010

€390.75
Excluding VAT
Summarise this standard

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Letter symbols
5 Essential ratings and characteristics
6 Measuring methods
7 Acceptance and reliability
Bibliography

IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006.

Committee
TC 47/SC 47E
DevelopmentNote
To be read in conjunction with IEC 60747-1. (12/2010) Supersedes IEC 60747-8-2, IEC 60747-8-3 & IEC 60747-8-4. (01/2014) Stability Date: 2018. (09/2017)
DocumentType
Standard
Pages
170
PublisherName
International Electrotechnical Committee
Status
Current
Supersedes

Standards Relationship
BS IEC 60747-8:2000 Identical
NEN IEC 60747-8 : 2011 Identical
IS 14901 : Part 8 : 2020 Identical
NEN 10747-8 : 1985 Identical
DIN IEC 60747-8:1989-08 Identical
BS IEC 60747-8:2010 Identical
BS 6493-1.8:1985 Identical
NFC 96 008 : 1985 Identical

€390.75
Excluding VAT