IEC 60749-17:2019
Current
The latest, up-to-date edition.
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
English - French
28-03-2019
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IEC 60749-17:2019 is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
This edition includes the following significant technical changes with respect to the previous edition:
- updates to better align the test method with MIL-STD 883J, method 1017, including removal of restriction of use of the document, and a requirement to limit the total ionization dose;
- addition of a Bibliography, including US MIL- and ASTM standards relevant to this test method.
| Committee |
TC 47
|
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| DIN EN IEC 60749-17 : 2019-11 | Identical |
| BS EN IEC 60749-17:2019 | Identical |
| EN IEC 60749-17:2019 | Identical |
| I.S. EN IEC 60749-17:2019 | Identical |
| NEN-EN-IEC 60749-17:2019 | Identical |
| UNE-EN IEC 60749-17:2019 | Identical |
| VDE 0884-749-17:2019-11 | Identical |
| PN-EN IEC 60749-17:2019-11 | Identical |
| CEI EN IEC 60749-17 : 2019 | Identical |
| CEI EN IEC 60749-17 : 2019 | Identical |
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