IEC 62416:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Hot carrier test on MOS transistors
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
English - French
26-04-2010
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FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography
IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.
| Committee |
TC 47
|
| DevelopmentNote |
Stability Date: 2020. (12/2017)
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Standards | Relationship |
| NBN EN 62416 : 2010 | Identical |
| NEN EN IEC 62416 : 2010 | Identical |
| I.S. EN 62416:2010 | Identical |
| PN EN 62416 : 2010 | Identical |
| UNE-EN 62416:2010 | Identical |
| BS EN 62416:2010 | Identical |
| CEI EN 62416 : 2011 | Identical |
| EN 62416 : 2010 | Identical |
| DIN EN 62416:2010-12 | Identical |
| PNE-FprEN 62416 | Identical |
| IEC TS 62686-1:2015 | Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors |
| PD IEC/TS 62686-1:2015 | Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors |
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