NBN EN 60749-23 : 2005 AMD 1 2011
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
12-01-2013
1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
4.1 Circuitry
4.1.1 Device schematic
4.1.2 Power
4.2 Device mounting
4.3 Power supplies and signal sources
4.4 Environmental chamber
5 Procedure
5.1 Stress duration
5.2 Stress conditions
5.2.1 Ambient temperature
5.2.2 Operating voltage
5.2.3 Biasing configurations
6 Cool-down
7 Measurements
8 Failure criteria
9 Summary
Determines the effects of bias conditions and temperature on solid state devices over time.
| DocumentType |
Standard
|
| PublisherName |
Belgian Standards
|
| Status |
Current
|
| Standards | Relationship |
| DIN EN 60749-23:2011-07 | Identical |
| EN 60749-23:2004/A1:2011 | Identical |
| I.S. EN 60749-23:2004 | Identical |
| BS EN 60749-23 : 2004 | Identical |
| UNE-EN 60749-23:2005 | Identical |
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