NBN EN 60749-8 : 2004
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 8: SEALING
12-01-2013
INTRODUCTION
1 Scope and object
2 Normative references
3 General terms
3.1 Units of pressure
3.2 Standard leak rate
3.3 Measured leak rate
3.4 Equivalent standard leak rate
4 Bomb pressure test
5 Fine leak detection: radioactive krypton method
5.1 Object
5.2 General description
5.3 Personnel precautions
5.4 Procedure
5.5 Specified conditions
5.6 Gross leak detection
6 Fine leak detection: tracer gas (helium) method
with mass spectrometer
6.1 General
6.2 Method 1: specimens not filled with helium
during manufacture - Fixed method
6.3 Method 2: specimens not filled with helium
during manufacture - Flexible method
6.4 Method 3: specimens filled with helium
during manufacture
6.5 Gross leak detection
7 Gross leaks, perfluorocarbon - bubble detection method
7.1 Object
7.2 General description
7.3 Test apparatus
7.4 Test method
7.5 Reject criterion
8 Gross leak - Perfluorocarbon - bubble detection method
9 Test condition E, weight-gain gross-leak detection
9.1 Object
9.2 Equipment
9.3 Procedure
9.4 Failure criteria
10 Penetrant dye gross leak detection
11 Gross leak re-test
Annex ZA (normative) Normative references to international
publications with their corresponding European
publications
Applies to semiconductor devices (discrete devices and integrated circuits). It determines the leak rate of semiconductor devices.
DevelopmentNote |
Supersedes NBN EN 60749. (04/2004)
|
DocumentType |
Standard
|
PublisherName |
Belgian Standards
|
Status |
Current
|
Standards | Relationship |
DIN EN 60749-8:2003-12 | Identical |
BS EN 60749-8:2003 | Identical |
I.S. EN 60749-8:2003 | Identical |
EN 60749-8:2003 | Identical |
UNE-EN 60749-8:2004 | Identical |
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