I.S. EN 60749-8:2003

FOREWORD
INTRODUCTION
1 Scope and object
2 Normative references
3 General terms
   3.1 Units of pressure
   3.2 Standard leak rate
   3.3 Measured leak rate
   3.4 Equivalent standard leak rate
4 Bomb pressure test
5 Fine leak detection: radioactive krypton method
   5.1 Object
   5.2 General description
   5.3 Personnel precautions
   5.4 Procedure
   5.5 Specified conditions
   5.6 Gross leak detection
6 Fine leak detection: tracer gas (helium) method
   with mass spectrometer
   6.1 General
   6.2 Method 1: specimens not filled with helium
       during manufacture - Fixed method
   6.3 Method 2: specimens not filled with helium
       during manufacture - Flexible method
   6.4 Method 3: specimens filled with helium
       during manufacture
   6.5 Gross leak detection
7 Gross leaks, perfluorocarbon - bubble detection
   method
   7.1 Object
   7.2 General description
   7.3 Test apparatus
   7.4 Test method
   7.5 Reject criterion
8 Gross leak - Perfluorocarbon - bubble detection
   method
9 Test condition E, weight-gain gross-leak detection
   9.1 Object
   9.2 Equipment
   9.3 Procedure
   9.4 Failure criteria
10 Penetrant dye gross leak detection
11 Gross leak re-test

Applicable to semiconductor devices (discrete devices and integrated circuits), it determines the leak rate of semiconductor devices.