SEMI 3D8 : 2014
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
GUIDE FOR DESCRIBING SILICON WAFERS FOR USE AS 300 MM CARRIER WAFERS IN A 3DS-IC TEMPORARY BOND-DEBOND (TBDB) PROCESS
Superseded date
07-12-2021
Superseded by
Published date
09-06-2014
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Pertains to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure virgin silicon carrier wafers to be used in a 3DS-IC process.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (06/2014)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Superseded
|
| SupersededBy |
| SEMI 3D4 : 2015 | GUIDE FOR METROLOGY FOR MEASURING THICKNESS, TOTAL THICKNESS VARIATION (TTV), BOW, WARP/SORI, AND FLATNESS OF BONDED WAFER STACKS |
| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI MF1391 : 2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M45 : 2010(R2017) | SPECIFICATION FOR 300 MM WAFER SHIPPING SYSTEM |
| SEMI MF1530 : 2007(R2018) | TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
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